- Home
- Download Datasheet
- IRF3205PBF
IRF3205PBF Datasheet
Datasheet specifications
| Datasheet's name | IRF3205PBF |
|---|---|
| File size | 73.383 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet IRF3205PBF |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRF3205PBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 200W
- Total Gate Charge (Qg@Vgs): 146nC@10V
- Drain Source Voltage (Vdss): 55V
- Input Capacitance (Ciss@Vds): 3247pF@25V
- Continuous Drain Current (Id): 110A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,62A
- Package: TO-220
- Manufacturer: Infineon Technologies